標題: Improvement of low-temperature gate dielectric formed in N2O plasma by an additional CF4 pretreatment process
作者: Chang, TY
Lei, TF
Chao, TS
Wen, HC
Chen, HW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: low-temperature oxide;metal gate;N2O/CF4 plasma;TDDB and GOI
公開日期: 1-七月-2002
摘要: This study describes a novel technique to form low temperature oxide (<350 &DEG;C). Low-temperature oxides were formed by N2O plasma in the plasma-enhanced chemical vapor deposition (PECVD) system with a CF4 pretreatment. These oxides demonstrate excellent current-voltage (I-V) characteristics comparable to thermally grown oxides. Experimental results indicate that CF4 plasma treatment can significantly improve the reliability of low-temperature oxides. With excellent electrical properties, the technique is highly promising for low-temperature processes.
URI: http://dx.doi.org/10.1109/LED.2002.1015208
http://hdl.handle.net/11536/28684
ISSN: 0741-3106
DOI: 10.1109/LED.2002.1015208
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 23
Issue: 7
起始頁: 389
結束頁: 391
顯示於類別:期刊論文


文件中的檔案:

  1. 000176491000005.pdf