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dc.contributor.authorLiu, PTen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorHsu, KCen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorChen, LMen_US
dc.contributor.authorWang, CJen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:42:13Z-
dc.date.available2014-12-08T15:42:13Z-
dc.date.issued2002-07-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(02)00423-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/28675-
dc.description.abstractThermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500 degreesC for I h. A series of material analysis techniques and electrical characteristics have been used to verify the physical and chemical characteristics of the porous silicate film. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectdielectric constanten_US
dc.subjectporous silicate filmsen_US
dc.subjectthermal stabilityen_US
dc.titleCharacterization of porous silicate for ultra-low k dielectric applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0040-6090(02)00423-6en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume414en_US
dc.citation.issue1en_US
dc.citation.spage1en_US
dc.citation.epage6en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000177418200001-
dc.citation.woscount19-
Appears in Collections:Articles


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