標題: Characterization of porous silicate for ultra-low k dielectric application
作者: Liu, PT
Chang, TC
Hsu, KC
Tseng, TY
Chen, LM
Wang, CJ
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: dielectric constant;porous silicate films;thermal stability
公開日期: 1-Jul-2002
摘要: Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500 degreesC for I h. A series of material analysis techniques and electrical characteristics have been used to verify the physical and chemical characteristics of the porous silicate film. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(02)00423-6
http://hdl.handle.net/11536/28675
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(02)00423-6
期刊: THIN SOLID FILMS
Volume: 414
Issue: 1
起始頁: 1
結束頁: 6
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