標題: Current status of resistive nonvolatile memories
作者: Lin, Chih-Yang
Liu, Chih-Yi
Lin, Chun-Chieh
Tseng, T. Y.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Nonvolatile memories;Resistance random access memory (RRAM);Perovskite oxides;Transition metal oxides;Molecular materials
公開日期: 1-Dec-2008
摘要: Several emerging nonvolatile memories (NVMs) such as ferroelectric memory, magnetoresistive rams and ovonic universal memory are being developed for possible applications. Resistive random access memory (RRAM) is another interesting competitor in the class of NVMs. The RRAM is based on a large change in electrical resistance when the memory film is exposed to voltage or current pulses, and can keep high or low resistance states without any power. The ideal RRAM Should have the superior properties of reversible switching, long retention tune, multilevel switching, simple structure, small size, and low operating voltage. Perovskite oxides, transition metal oxides, and molecular materials were found to have resistive memory properties. This presentation reviews the ongoing research and development activities on future resistance NVMs technologies incorporating these new memory materials. The possible basic mechanisms for their bistable resistance switching are described. The effect of processing, composition, and structure on the properties of resistive memory materials and consequently the devices are discussed.
URI: http://dx.doi.org/10.1007/s10832-007-9081-y
http://hdl.handle.net/11536/28654
ISSN: 1385-3449
DOI: 10.1007/s10832-007-9081-y
期刊: JOURNAL OF ELECTROCERAMICS
Volume: 21
Issue: 1-4
起始頁: 61
結束頁: 66
Appears in Collections:Conferences Paper


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