標題: A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET
作者: Li, YM
Chao, TS
Sze, SM
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
關鍵字: semiconductor device simulation;DTMOS;parallel adaptive FVM;dynamic load balancing
公開日期: 1-Aug-2002
摘要: In this paper, we present a dynamic domain partition simulation technique for parallel numerical solutions of semiconductor device equations. Based on the adaptive finite volume method, a posteriori error estimation, and monotone iterative algorithm, this dynamic load balancing approach has been successfully developed and implemented on a Linux cluster with message passing interface library. The developed simulator is then applied to calculate the physical characteristics of deep submicron dynamic threshold voltage MOSFET (DTMOS). We simulate DTMOS with two different parallel algorithms: (1) 2D dynamic load balancing for parallel domain decomposition; (2) parallel I-V point simulation. Benchmark results show that a well-designed load balancing simulation can reduce the execution time up to an order of magnitude. Compared with the measured data, the simulated results for a 0.08 mum DTMOS are demonstrated to show the accuracy and efficiency of the method. (C) 2002 Elsevier Science B.V All rights reserved.
URI: http://dx.doi.org/10.1016/S0010-4655(02)00368-5
http://hdl.handle.net/11536/28652
ISSN: 0010-4655
DOI: 10.1016/S0010-4655(02)00368-5
期刊: COMPUTER PHYSICS COMMUNICATIONS
Volume: 147
Issue: 1-2
起始頁: 697
結束頁: 701
Appears in Collections:Conferences Paper