標題: Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
作者: Shieh, JM
Chang, SC
Dai, BT
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Cu;electroplating;2-aminobenzothiazole;polarization;RTA
公開日期: 1-Aug-2002
摘要: Complete filling of 0.13-mum vias and deposition of Cu with a low resistivity of about 2.3 muOmega(.)cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400degreesC for 30 s, the resistivity was further reduced to similar to1.9 muOmega(.)cm.
URI: http://hdl.handle.net/11536/28646
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 8
起始頁: 5104
結束頁: 5107
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