標題: Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing
作者: Tseng, CH
Lin, CW
Teng, TH
Chang, TK
Cheng, HC
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: excimer laser annealing;dopant activation;polycrystalline silicon thin film transistor;active-matrix liquid crystal display
公開日期: 1-八月-2002
摘要: The KrF excimer laser annealing of phosphorous implanted polycrystalline silicon (poly-Si) films had been investigated completely. Resistors were fabricated to measure sheet resistance of poly-Si film. The interference effect, heat absorption of capping oxide as well as transformation of poly-Si grain size during laser annealing were reported. Depending on the carrier concentrations, poly-Si exhibits different sheet resistance behavior when the excimer laser fluence is higher than the full-melt threshold fluence. The sheet resistance of poly-Si film has an abnormal increase from 5 x 10(4) to 4 x 10(6) Q/square when the excimer laser energy is higher than full-melt threshold energy. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(02)00046-1
http://hdl.handle.net/11536/28644
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(02)00046-1
期刊: SOLID-STATE ELECTRONICS
Volume: 46
Issue: 8
起始頁: 1085
結束頁: 1090
顯示於類別:會議論文


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