標題: Dependence of deep level concentrations on ammonia flow rate in n-type GaN films
作者: Lee, L
Chang, FC
Chung, HM
Lee, MC
Chen, WH
Chen, WK
Huang, BR
電子物理學系
Department of Electrophysics
公開日期: 1-八月-2002
摘要: Deep level transient spectroscoppy was used to characterize the deep levels of GaN films grown with various V/III ratios using metalorganic vapor phase epitaxy. Two prominent defects, located at E(C)-0.569 +/- 0.003 and E(C)-1.013 +/- 0.091 eV, were detected in this study. When the NH(3) flow rate was increased, we observed a slight increase in trap concentration of the E(C)-0.569 eV defect and a significant increase at E(C)-1.013 eV. Although a high V/III seems necessary for obtaining good quality GaN film, our results indicate that, if the ammonia is in excessive supply, it may generate a large number of E(C)-1.013 eV deep level defects, which deteriorate the film quality - which should be avoided with special care.
URI: http://hdl.handle.net/11536/28607
ISSN: 0577-9073
期刊: CHINESE JOURNAL OF PHYSICS
Volume: 40
Issue: 4
起始頁: 424
結束頁: 428
顯示於類別:期刊論文


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  1. 000177497700007.pdf