標題: Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process
作者: Chang, TY
Lei, TF
Chao, TS
Chen, SW
Kao, LM
Chen, SK
Tuan, A
Su, TP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: gate oxide integrity (GOI);Co-salicide;fluorine and nitrogen implantation;leakage performance;breakdown charge and stress induce leakage current (SILC)
公開日期: 1-Aug-2002
摘要: In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(02)00048-5
http://hdl.handle.net/11536/28603
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(02)00048-5
期刊: SOLID-STATE ELECTRONICS
Volume: 46
Issue: 8
起始頁: 1097
結束頁: 1101
Appears in Collections:Conferences Paper


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