標題: Degradation of passivated and non-passivated N-channel low-temperature polycrystalline silicon TFTs prepared by excimer laser processing
作者: Teng, TH
Huang, CY
Chang, TK
Lin, CW
Cheng, LJ
Lu, YL
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: poly-si TFT;excimer laser;instability;bias stress;plasma treatment
公開日期: 1-八月-2002
摘要: The instability mechanisms of passivated and non-passivated low-temperature polycrystalline silicon thin film transistors (LTPS TFTs) under various bias stress conditions have been investigated. Irrespective of plasma treatment, the degradation was more severe under negative gate bias stress than that under positive gate bias stress. This could be due to Fowler-Nordheim tunneling electron induced impact ionization. For hot carrier stress, TFTs with NH3 plasma treatment degraded more severely than those without plasma treatment. This might be attributed to collapsing of weak Si-H bonds in NH3-plasma passivated devices. For the high current stress, it showed the opposite results against hot carrier stress. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(02)00045-X
http://hdl.handle.net/11536/28601
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(02)00045-X
期刊: SOLID-STATE ELECTRONICS
Volume: 46
Issue: 8
起始頁: 1079
結束頁: 1083
顯示於類別:會議論文


文件中的檔案:

  1. 000177094400002.pdf