Title: High power Al0.3Ga0.7As/In0.2Ga0.8As enhancement-mode PHEMT for low-voltage wireless communication systems
Authors: Chen, SH
Chang, L
Chang, EY
Wu, JW
Chang, CY
材料科學與工程學系
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
Issue Date: 29-Aug-2002
Abstract: A 20 mm-wide enhancement-mode pseudomorphic high-electron-mobility transistor (E-PHEMT) has been developed. The device has high transconductance of 490 mS/mm, and high maximum drain current of 350 mA/mm due to the use of an Al(0.3)G(4.7)As/In0.2Ga0.8As-based structure for carrier confinement. At 1.9 GHz and 3.0 V, the E-PHEMT shows 34.1 dBm (128 mW/mm) output power with power-added efficiency (PAE) of 64.5%. At 2.4 V, the maximum saturated output power is 32.25 dBm and maximum PAE is 78.5%. The E-PHEMT demonstrates excellent power performance at 1.9 GHz and below 3 V.
URI: http://dx.doi.org/10.1049/el:20020700
http://hdl.handle.net/11536/28573
ISSN: 0013-5194
DOI: 10.1049/el:20020700
Journal: ELECTRONICS LETTERS
Volume: 38
Issue: 18
Begin Page: 1063
End Page: 1064
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