標題: Microleveling mechanisms and applications of electropolishing on planarization of copper metallization
作者: Chang, SC
Shieh, JM
Huang, CC
Dai, BT
Li, YH
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Sep-2002
摘要: The optimization of Cu electropolishing processes was explored to be in the mass-transfer-limited plateau with a stable limiting current density and in concentrated phosphoric acid by elucidating surface morphologies and potentiodynamic polarization. After electropolishing, the average roughness of polished surfaces achieved to 1.1 nm. Both the x-ray photoelectron spectroscopy and the electrochemical impedance spectroscopy suggest that the existence of a passivation film on the polished surface contributed to the microleveling effect of Cu electropolishing. Moreover, this passivation layer also induces an application of end point in electropolishing. (C) 2002 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1511218
http://hdl.handle.net/11536/28550
ISSN: 1071-1023
DOI: 10.1116/1.1511218
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 20
Issue: 5
起始頁: 2149
結束頁: 2153
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