標題: Characteristics of copper films deposited on H(2)-plasma-treated TaN substrate by chemical vapor deposition
作者: Lin, CL
Chen, PS
Chang, CL
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Sep-2002
摘要: This work investigates the chemical vapor deposition Cu films deposited on the TaN substrate with and without an H(2)-plasma treatment prior to Cu film deposition and the effect of postdeposition thermal annealing. The Cu films deposited on the H(2)-plasma-treated TaN substrate have a number of favorable properties over the films deposited on the TaN substrate without the plasma treatment. These include an increased (111)-preferred orientation, smoother film surface, and a larger effective deposition rate. However, the Cu films deposited on the H(2)-plasma-treated substrate have a higher electrical resistivity, presumably due to the smaller, grain size. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. We presume that the H(2)-plasma treatment, resulted in a dense and uniform distribution of hydrogen radicals adsorbed on the substrate surface, leading to the shortening of incubation time and the formation of Cu films with a smoother surface and enhanced (100)-preferred orientation. A combined process including H(2)-plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N(2) ambient, is proposed for the advantage of low-resistivity and high (111)-oriented Cu film deposition. (C) 2002 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1502697
http://hdl.handle.net/11536/28549
ISSN: 1071-1023
DOI: 10.1116/1.1502697
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 20
Issue: 5
起始頁: 1947
結束頁: 1953
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