標題: An improved two-frequency method of capacitance measurement for SrTiO3 as high-k gate dielectric
作者: Lue, HT
Liu, CY
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOS capacitor;capacitance measurement;frequency dispersion;STO gate dielectric
公開日期: 1-九月-2002
摘要: An improved two-frequency method of capacitance measurement for the high-k gate dielectrics is proposed. The equivalent circuit model of the MOS capacitor including the four parameters of intrinsic capacitance, loss tangent, parasitic series inductance, and series resistance is developed. These parameters can be extracted by independently measuring the capacitor at two different frequencies. This technique is demonstrated for high-k SrTiO3 gate dielectrics and the results show that the calibrated capacitances are invariant over a wide range of frequency. In addition, the extracted loss tangent, inductance and resistance are independent on gate voltage and frequency. The effect of series resistance on the frequency dispersion of the capacitance can be also explained by this model. These results indicate that this modified technique can be incorporated in the routine capacitance-voltage (C-V) measurement procedure providing the physically meaningful data for the high-k gate dielectrics.
URI: http://dx.doi.org/10.1109/LED.2002.802588
http://hdl.handle.net/11536/28548
ISSN: 0741-3106
DOI: 10.1109/LED.2002.802588
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 23
Issue: 9
起始頁: 553
結束頁: 555
顯示於類別:期刊論文


文件中的檔案:

  1. 000177748500017.pdf