標題: An investigation of bias temperature instability in hydrogenated low-temperature polycrystalline silicon thin film transistors
作者: Lin, CW
Tseng, CH
Chang, TK
Chang, YH
Chu, FT
Lin, CW
Wang, WT
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: polycrystalline silicon thin film transistor;hydrogenation;hot carrier;self-heating;depassivation/passivation
公開日期: 1-九月-2002
摘要: The instability mechanisms of the hydrogenated n-channel low-temperature polycrystalline silicon thin film transistors under on-state stress were investigated with various bias stress conditions and device channel widths. It was found that hot carrier degradation which originated from a high drain electric field and self-heating during high current operation were the two dominant mechanisms responsible for device degradation. An electrically reversible depassivation/passivation phenomenon was also found in devices under high current stress. but not in those under hot carrier stress. It was inferred that the self-heating effect would accelerate the bond breakage and diffusion of hydrogen ions, thus enhancing the rate of depassivation/passivation. Moreover. when the Current in the hot carrier stress mode was sufficiently high. self-heating became the dominant degradation mechanism and hot carrier degradation phenomenon was also suppressed for devices with large channel width, Meanwhile, the electrically reversible depassivation/passivation phenomenon also occurred in this case.
URI: http://hdl.handle.net/11536/28535
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 9
起始頁: 5517
結束頁: 5522
顯示於類別:期刊論文


文件中的檔案:

  1. 000180071900005.pdf