標題: Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD
作者: Chang, KM
Cheng, CC
Lang, CC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: GaN;silicon nitride;ECR;gate dielectric;MISFET
公開日期: 1-九月-2002
摘要: Silicon nitride (SiN) film was deposited at 300 degreesC as the insulating layer of a GaN-based metal-insulator-semiconductor (MIS) diode by using electron cyclotron resonance chemical vapor deposition (ECR-CVD) with silane-to nitrogen (SiH4/N-2) flow ratio of 5/45. The deposited film had the refractive index of 1.9-2.0 and the relative dielectric constant of 6. Capacitance-voltage (C-V) characteristics were measured at I MHz and interface state densities were obtained by Terman's method. The negative fixed charge density of the SiN film was 1.1 x 10(11) cm(-2) and its breakdown field was greater than 5.7 MV/cm even at 350 degreesC. The value of the interface state density was less than 4 x 10(11) cm(-2) around the mid-gap and its minimum was 5 x 10(10) cm(-2) eV(-1) at 0.6 eV below the conduction band edge. From these results, the SiN film deposited by ECR-CVD is a promising gate dielectric for high temperature GaN-MISFET application. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0038-1101(02)00085-0
http://hdl.handle.net/11536/28530
ISSN: 0038-1101
DOI: 10.1016/S0038-1101(02)00085-0
期刊: SOLID-STATE ELECTRONICS
Volume: 46
Issue: 9
起始頁: 1399
結束頁: 1403
顯示於類別:期刊論文


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