Title: Characteristics of deep levels in As-implanted GaN films
Authors: Lee, L
Lee, WC
Chung, HM
Lee, MC
Chen, WH
Chen, WK
Lee, HY
Department of Electrophysics
Issue Date: 2-Sep-2002
Abstract: Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 degreesC thermal annealing for 60 min, one additional deep level located at E-C-0.766 eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1499739
ISSN: 0003-6951
DOI: 10.1063/1.1499739
Volume: 81
Issue: 10
Begin Page: 1812
End Page: 1814
Appears in Collections:Articles

Files in This Item:

  1. 000177676200021.pdf