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dc.contributor.authorPeng, DZen_US
dc.contributor.authorZan, HWen_US
dc.contributor.authorShih, PSen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLin, CWen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:41:56Z-
dc.date.available2014-12-08T15:41:56Z-
dc.date.issued2002-09-26en_US
dc.identifier.issn0042-207Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0042-207X(02)00255-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/28518-
dc.description.abstractThe ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobility compared to that obtained by LPCVD using disilane (Si2H6) in amorphous phase followed by solid phase crystallization (SPC). The on-off current ratio for UHVCVD deposited poly-Si thin film transistors (TFTs) is approximately one order smaller, however, the leakage current for LPCVD SPC TFTs is higher. In this experiment, NH3 was introduced to both of the two samples to improve the device performance. It can be shown that improvements on device characteristics are more significant for UHVCVD deposited poly-Si TFTs, e.g. threshold voltage decreased dramatically and the on-off current ratio improved by two orders of magnitude. (C) 2002 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectpoly-Sien_US
dc.subjectTFTen_US
dc.subjectultra-high vacuum chemical vapor deposition (UHVCVD)en_US
dc.subjectlow-pressure chemical vapor depositionen_US
dc.subject(LPCVD)en_US
dc.subjectsolid phase crystallization (SPC)en_US
dc.subjectplasma passivationen_US
dc.titleComparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0042-207X(02)00255-5en_US
dc.identifier.journalVACUUMen_US
dc.citation.volume67en_US
dc.citation.issue3-4en_US
dc.citation.spage641en_US
dc.citation.epage645en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000178803500054-
Appears in Collections:Conferences Paper


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