標題: Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors
作者: Peng, DZ
Zan, HW
Shih, PS
Chang, TC
Lin, CW
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: poly-Si;TFT;ultra-high vacuum chemical vapor deposition (UHVCVD);low-pressure chemical vapor deposition;(LPCVD);solid phase crystallization (SPC);plasma passivation
公開日期: 26-九月-2002
摘要: The ultra-high vacuum chemical vapor deposition (UHVCVD) system can deposit poly-Si film without any laser or furnace annealing. The uniformity of threshold voltage and mobility is superior to that deposited by low-pressure chemical vapor deposition (LPCVD) system. However, due to the deposition in polycrystalline phase for UHVCVD, the film surface is rough and results in low field effect mobility compared to that obtained by LPCVD using disilane (Si2H6) in amorphous phase followed by solid phase crystallization (SPC). The on-off current ratio for UHVCVD deposited poly-Si thin film transistors (TFTs) is approximately one order smaller, however, the leakage current for LPCVD SPC TFTs is higher. In this experiment, NH3 was introduced to both of the two samples to improve the device performance. It can be shown that improvements on device characteristics are more significant for UHVCVD deposited poly-Si TFTs, e.g. threshold voltage decreased dramatically and the on-off current ratio improved by two orders of magnitude. (C) 2002 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0042-207X(02)00255-5
http://hdl.handle.net/11536/28518
ISSN: 0042-207X
DOI: 10.1016/S0042-207X(02)00255-5
期刊: VACUUM
Volume: 67
Issue: 3-4
起始頁: 641
結束頁: 645
顯示於類別:會議論文


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  1. 000178803500054.pdf