Title: Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors
Authors: Chen, KM
Huang, GW
Chiu, DY
Huang, HJ
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 30-Sep-2002
Abstract: Low-frequency noise in boron-doped polycrystalline silicon-germanium (poly-Si1-xGex) resistors at various temperatures is studied. The poly-Si1-xGex films with 0%similar to36% Ge content were grown using ultrahigh vacuum chemical molecular epitaxy system. We find that the low-frequency noise in poly-Si1-xGex decreases with increasing Ge content, due to the lower potential barrier height of grain boundaries in higher Ge content samples. Moreover, the low-frequency noise decreases with increasing temperature. These results are well explained by the carrier mobility fluctuation model. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1511815
http://hdl.handle.net/11536/28515
ISSN: 0003-6951
DOI: 10.1063/1.1511815
Journal: APPLIED PHYSICS LETTERS
Volume: 81
Issue: 14
Begin Page: 2578
End Page: 2580
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