標題: Trimethylchlorosilane treatment of ultralow dielectric constant material after photoresist removal processing
作者: Chang, TC
Mor, YS
Liu, PT
Tsai, TM
Chen, CW
Chu, CJ
Pan, FM
Lur, W
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-2002
摘要: The dielectric properties of organic-porous silica films deteriorate after photoresist removal processing. O-2 plasma ashing has been commonly used to remove photoresist. Nevertheless, the O-2 plasma will destroy the functional groups and induce moisture uptake in porous silica films. In this study, trimethylchlorosilane (TMCS) is used to repair the damage to porous silica caused by the O-2 plasma ashing process. The leakage current and dielectric constant will decrease significantly after the TMCS treatment is applied to damaged porous silica. These experimental results show that the TMCS treatment is a promising technique to repair the damage to porous silica during photoresist removal processing. (C) 2002 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1504456
http://hdl.handle.net/11536/28489
ISSN: 0013-4651
DOI: 10.1149/1.1504456
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 149
Issue: 10
起始頁: F145
結束頁: F148
顯示於類別:期刊論文


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