標題: Rapid thermal annealing effects on blue luminescence of As-implanted GaN
作者: Huang, HY
Xiao, JQ
Ku, CS
Chung, HM
Chen, WK
Chen, WH
Lee, MC
Lee, HY
電子物理學系
Department of Electrophysics
公開日期: 1-Oct-2002
摘要: Rapid thermal annealing effects on blue luminescence of As-implanted GaN grown by metalorganic vapor phases epitaxy were investigated by means of photoluminescence and photoluminescence excitation measurements. The locations of the As-implantation induced bands and the associated transition channels for the emission were determined to characterize the As-implanted GaN. After the rapid thermal annealing treatment, the deep As-related levels become more ready to be populated by photoexcitation at low temperature so that the new blue luminescence emission peak is enhanced significantly, whose activation energy is found to be 46 meV. (C) 2002 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1503160
http://hdl.handle.net/11536/28466
ISSN: 0021-8979
DOI: 10.1063/1.1503160
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 92
Issue: 7
起始頁: 4129
結束頁: 4131
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