標題: Electroless plating with Pd induced crystallization of amorphous silicon thin films
作者: Hu, GR
Wu, YCS
Chao, CW
Huang, TJ
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: electroless plating;metal-induced-crystallization;amorphous silicon;polycrystalline silicon;thin film transistor
公開日期: 1-Nov-2002
摘要: A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.
URI: http://dx.doi.org/10.1143/JJAP.41.6356
http://hdl.handle.net/11536/28431
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.6356
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 41
Issue: 11A
起始頁: 6356
結束頁: 6357
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