標題: EXPERIMENTAL COMPARISON OF OFF-STATE CURRENT BETWEEN HIGH-TEMPERATURE-PROCESSED AND LOW-TEMPERATURE-PROCESSED UNDOPED CHANNEL POLYSILICON THIN-FILM TRANSISTORS
作者: YEH, CF
YANG, TZ
CHEN, CL
CHEN, TJ
YANG, YC
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: POLYCRYSTALLINE;SILICON;TFT;LEAKAGE CURRENT;CONDUCTION MECHANISM
公開日期: 1-十月-1993
摘要: Poly-Si thin-film transistors (TFT's) have a large off -state current that is unacceptable for pixel river application. To quickly establish an effective solution to reduce the off-state current, systematic comparison and clarification of the mechanisms of off-state current are still insufficient. We will concentrate on an experimental comparison of off -state current mechanisms between low-temperature-processed (LTP) and high-temperature-processed (HTP) poly-Si TFT devices. Since all the off-state currents are found to be divided into three regions in LTP and HTP poly-Si TFT's, they are attributable to a resistive current in region I (low gate bias), pure thermal generation in region II (low drain bias) and Frenkel-Poole emission in region III (high gate bias, drain bias).
URI: http://hdl.handle.net/11536/2840
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 32
Issue: 10
起始頁: 4472
結束頁: 4478
顯示於類別:期刊論文


文件中的檔案:

  1. A1993MQ76000016.pdf