標題: Effect of CF4 plasma pretreatment on low temperature oxides
作者: Chang, TY
Chen, HW
Lei, TF
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: low temperature oxides;mobility and hot carrier stress;N2O/CF4 plasma;Qbd;replacement metal gate;TDDB
公開日期: 1-Dec-2002
摘要: This study describes a novel technique for forming low temperature oxides (<350 degreesC) using a replacement metal gate process. Low temperature oxides were generated by N2O plasma in a PECVD system with pretreatment in CF4. Fabricated oxides demonstrate excellent current-voltage (I-V) characteristics, such as low leakage current, high breakdown charge and good reliability. Experimental results indicate that CF4 plasma treatment can significantly improve the mobility and resistance against hot carrier stress of MOSFETs. With excellent electrical properties, this technique is suitable for fabrication low temperature devices.
URI: http://dx.doi.org/10.1109/TED.2002.807451
http://hdl.handle.net/11536/28363
ISSN: 0018-9383
DOI: 10.1109/TED.2002.807451
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 49
Issue: 12
起始頁: 2163
結束頁: 2170
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