標題: Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential
作者: Li, YM
Tang, TW
Wang, XL
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: effective potential;modeling and simulation;MOS devices;quantum effect;Schrodinger-Poisson
公開日期: 1-Dec-2002
摘要: In this paper, the effectiveness of the effective potential (EP) method for modeling quantum effects in ultrathin oxide MOS structures is investigated. The inversion-layer charge density and MOS capacitance in one-dimensional MOS structures are simulated with various substrate doping profiles and gate bias voltages. The effective mass is used as an adjusting parameter to compare results of the EP model with that of the Schrodinger-Poisson solution. The variation of this optimum parameter for various doping profiles at different gate voltages is investigated. The overestimated average inverse charge depth by the EP method is quantified and its reason explained. The EP model is a good practical simulation tool for modeling quantum effects but more work needs to be done to improve its accuracy near the interface.
URI: http://dx.doi.org/10.1109/TNANO.2002.807386
http://hdl.handle.net/11536/28357
ISSN: 1536-125X
DOI: 10.1109/TNANO.2002.807386
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 1
Issue: 4
起始頁: 238
結束頁: 242
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000182374000013.pdf