標題: Characteristics of p-type GaN films doped with isoelectronic indium atoms
作者: Chang, FC
Shen, KC
Chung, HM
Lee, MC
Chen, WH
Chen, WK
電子物理學系
Department of Electrophysics
公開日期: 1-Dec-2002
摘要: The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 x 10(17) cm(-3) and similar to 1 Omega-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.
URI: http://hdl.handle.net/11536/28336
ISSN: 0577-9073
期刊: CHINESE JOURNAL OF PHYSICS
Volume: 40
Issue: 6
起始頁: 637
結束頁: 643
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