標題: Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 mu m CMOSFET with 2-nm thin gate oxide
作者: Yeh, WK
Wang, WH
Fang, YK
Chen, MC
Yang, FL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot-carrier effect;hot-carrier-induced degradation;partially depleted SOI
公開日期: 1-Dec-2002
摘要: Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BG-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 mum with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition of the 0.1 mum FB-SOI pMOSFET is similar to that of the 0.1 mum BG-SOI pMOSFET.
URI: http://dx.doi.org/10.1109/TED.2002.805617
http://hdl.handle.net/11536/28332
ISSN: 0018-9383
DOI: 10.1109/TED.2002.805617
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 49
Issue: 12
起始頁: 2157
結束頁: 2162
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