標題: Growth of the large area horizontally-aligned carbon nanotubes by ECR-CVD
作者: Hsu, CM
Lin, CH
Chang, HL
Kuo, CT
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: chemical vapor deposition;field emission;carbon;scanning electron microscopy
公開日期: 2-Dec-2002
摘要: For potential applications of carbon nanotubes (CNTs) as connectors in microelectronic devices, the process to synthesize the large area horizontally-aligned CNTs on 100 mm (4 inch) Si wafers was developed, using electron cyclotron resonance chemical vapor deposition, with CH, and H, as the source gases and Co as the catalyst. The results show that vertical and horizontal CNTs can be obtained by manipulating the electric field applied on the substrate and flow direction of the gases. In the present deposition conditions, the horizontal CNTs show better field emission properties than vertical CNTs. This may be due to the blocking effect of catalysts at the tips and to the diminishment of the effective emission area from defects of vertical CNTs body. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(02)00799-X
http://hdl.handle.net/11536/28321
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(02)00799-X
期刊: THIN SOLID FILMS
Volume: 420
Issue: 
起始頁: 225
結束頁: 229
Appears in Collections:Conferences Paper


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