標題: New nanometer T-gate fabricated by thermally reflowed resist technique
作者: Lee, HM
Chang, EY
Chen, SH
Chang, CY
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
關鍵字: nanometer T-gate;reflowed resist technique;lift-off process;electron beam lithography;monolithic microwave integrated circuit
公開日期: 15-Dec-2002
摘要: Novel nanometer T-gate process has been developed utilizing electron beam (EB) lithography and thermally reflowed resist technique. Through well-controlled EB exposure dosage, heating time and reflow temperature; the resist structures can be efficiently reflowed to form the desired T-gate configuration with dimension ranging from 150 nm to 30 nm. After Ti/Pt/Au metal deposition by electron gun evaporation and lift-off process, the nanometer T-gates with thickness of about 500 nm were formed. With the optimized conditions, ultra-short 30 nm T-shaped gate was clearly demonstrated on the GaAs substrate. This is the smallest T-gate reported with the thermally reflowed technique in the literature so far and can practically be used in the GaAs monolithic microwave integrated circuit (MMIC) fabrications.
URI: http://dx.doi.org/10.1143/JJAP.41.L1508
http://hdl.handle.net/11536/28314
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.L1508
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 41
Issue: 12B
起始頁: L1508
結束頁: L1510
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