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dc.contributor.authorCHEN, PAen_US
dc.contributor.authorJUANG, Cen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:04:19Z-
dc.date.available2014-12-08T15:04:19Z-
dc.date.issued1993-10-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/3.250382en_US
dc.identifier.urihttp://hdl.handle.net/11536/2829-
dc.description.abstractEmission energy shift due to high carrier density at threshold in multiple quantum well (MQW) laser diodes is investigated theoretically. This energy shift is evaluated through the Schrodinger and the Poisson equations self-consistently as well as the calculation of the gain spectra with carrier-dependent lifetime broadening. The band filling and the gain broadening effects show a blue shift on the emission energy. Larger number of wells, lower barrier height, or wider well thickness, reduces the blue shift dependence on the carrier density. At high injections, this blue shift is offset by the bandgap shrinkage effect, which displays smaller influence on MQW's. While the carrier density is further increased, the transition due to the second quantized state is found in single quantum wells, however it is difficult to be observed in MQW's.en_US
dc.language.isoen_USen_US
dc.titleCARRIER-INDUCED ENERGY SHIFT IN GAAS/ALGAAS MULTIPLE-QUANTUM-WELL LASER-DIODESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/3.250382en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume29en_US
dc.citation.issue10en_US
dc.citation.spage2607en_US
dc.citation.epage2618en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1993MN49500004-
dc.citation.woscount18-
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