標題: Growing high-performance tunneling oxide by CF4 plasma pretreatment
作者: Chang, TY
Lee, JW
Lei, TF
Lee, CL
Wen, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2003
摘要: Thin tunneling oxides grown on a CF4 pretreated silicon substrate were prepared and investigated for the first time. The tunneling current of the CF4-treated oxide is about three orders of magnitude higher than that of thermal oxide; furthermore, the stress-induced anomalous current and low electric field leakage current were greatly suppressed. The improvement was attributed to the incorporation of fluorine in the oxide region. Both control and CF4-treated devices exhibited comparable channel mobility. However, pretreatment with CF4 markedly improved the reliability of the insulator. This oxide is highly promising for fabricating low-voltage electrically erasable and programmable read-only memories (EEPROMs) without increasing the complexity of the process. (C) 2002 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1527052
http://hdl.handle.net/11536/28294
ISSN: 0013-4651
DOI: 10.1149/1.1527052
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 150
Issue: 1
起始頁: G33
結束頁: G38
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