標題: Effect of post-treatment on electrical properties of amorphous hydrogenated carbon films deposited by gridless ion beam deposition
作者: Chen, CF
Li, YW
Huang, HL
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: gridless ion beam deposition;amorphous hydrogenated carbon;plasma;electrical properties;Raman
公開日期: 1-Jan-2003
摘要: Amorphous hydrogenated carbon (a-C:H) films were deposited from the gas mixtures of acetylene (C2H2) and argon (Ar) in a gridless ion beam deposition (GIBD) system fed with dc power. Vacuum annealing and hydrogen plasma treatment were performed on the a-C:H films and their effects on the physical and electrical properties of the films were investigated. Film structure and properties were investigated as a function of the C2H2 flow rate by Raman spectroscopy. Through the Raman spectra, we found that the Raman I-D/I-G intensity ratio increases as annealing temperature increases, which indicates a more graphite-like character in the annealed films. The dielectric constant of the annealed a-CA films was reduced from 3.8 to 2.9 and the thickness also slightly decreased with increasing annealing temperature. However, the leakage current density and dielectric constant of the hydrogen-plasma-treated a-C:H films were clearly lower than the as-deposited a-C:H films.
URI: http://hdl.handle.net/11536/28266
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 1
起始頁: 259
結束頁: 262
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