標題: Chemical vapor deposition of tantalum carbide and carbonitride thin films from Me3CE=Ta(CH2CMe3)(3) (E = CH, N)
作者: Chang, YH
Wu, JB
Chang, PJ
Chiu, HT
應用化學系
Department of Applied Chemistry
公開日期: 2003
摘要: Chemical vapor deposition (CVD) of thin films employing Me3CCH=Ta(CH2CMe3)(3) and Me3CN=Ta(CH2CMe3)(3) as the precursors has been carried out. TaC and TaCN films were deposited at relatively low temperatures (623-923 K). In comparison, using Me3CN=Ta(CH2CMe3)(3), the Ta=N bond did not undergo cleavage during the reaction and the N atom was incorporated into the film as nitride. The volatile components evolved were collected and examined by GC-MS, FT-IR, H-1 and C-13 NMR spectroscopy. Possible decomposition pathways of the tantalum complexes are proposed to rationalize the observation.
URI: http://hdl.handle.net/11536/28249
http://dx.doi.org/10.1039/b208129f
ISSN: 0959-9428
DOI: 10.1039/b208129f
期刊: JOURNAL OF MATERIALS CHEMISTRY
Volume: 13
Issue: 2
起始頁: 365
結束頁: 369
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