標題: Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon films
作者: Lee, MZ
Chang, YA
Lee, CL
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2003
摘要: Vertical thermal and PECVD (plasma enhanced chemical vapor deposition) polysilicon oxides, formed on polysilicon sidewalls, are investigated to demonstrate that the oxides on polysilicon sidewalls have much better electrical qualities than do conventional planar polysilicon oxides. For thermally grown vertical polysilicon oxides, the charges-to-breakdown were as high as 10 C/cm(2), values that are comparable to that of the single crystal oxide. This improvement is primarily due to the fewer number of grain boundaries in the vertical direction of the polysilicon. (C) 2002 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1524613
http://hdl.handle.net/11536/28244
ISSN: 0013-4651
DOI: 10.1149/1.1524613
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 150
Issue: 1
起始頁: G28
結束頁: G32
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