標題: CHARACTERISTICS OF POLYSILICON CONTACTED SHALLOW JUNCTION DIODE FORMED WITH A STACKED-AMORPHOUS-SILICON FILM
作者: WU, SL
LEE, CL
LEI, TF
CHANG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十月-1993
摘要: A high-performance shallow junction diode formed with a stacked-amorphous-silicon (SAS) film is presented. Since the boundaries of stacked silicon layers and the poly/mono silicon interface act as a diffusion barrier for implanted dopants, the junction depth of SAS emitter contacted diode is about 500 angstrom shallower than that of the as-deposited polysilicon (ADP) emitter contacted diode. The fabricated SAS emitter contacted diodes exhibited a very low reverse leakage current (less-than-or-equal-to 1 nA/cm2 at -5 V) and a forward.ideality factor m almost-equal-to 1.001 over 7 decades on a log scale. The reverse I-V characteristics were found to be nearly independent of the reverse voltage from the room temperature to 200-degrees-C, and it was also found that the leakage current was due almost completely to the diffusion current. The plots of the diode leakage current versus the perimeter to area ratio showed that the periphery generation current only contributed a small portion to the total leakage. The processing temperature for the SAS emitter contacted p+-n diode can be as low as 600-degrees-C.
URI: http://dx.doi.org/10.1109/16.277336
http://hdl.handle.net/11536/2823
ISSN: 0018-9383
DOI: 10.1109/16.277336
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 40
Issue: 10
起始頁: 1797
結束頁: 1804
顯示於類別:期刊論文


文件中的檔案:

  1. A1993MA76600012.pdf