Title: CURRENT GAINS OF ALAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTORS WITH 25-500-ANGSTROM BARRIER THICKNESS
Authors: CHEN, HR
LEE, CP
CHANG, CY
TSAI, KL
TSANG, JS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: SEMICONDUCTOR DEVICES;HETEROJUNCTION BIPOLAR TRANSISTORS;TUNNELING STRUCTURES
Issue Date: 14-Oct-1993
Abstract: The current gain of an AlAs/GaS tunnelling emitter bipolar transistor (TEBT) is found to increase monotonically with barrier thickness in the range 25-200 angstrom and fall off for barrier thickness increasing from 200 to 500 angstrom. It is found that a thicker barrier can suppress the base-to-emitter hole injection better and increase the current gain, but a barrier which is too thick decreases the current gain due to the suppression of the electron current.
URI: http://hdl.handle.net/11536/2820
ISSN: 0013-5194
Journal: ELECTRONICS LETTERS
Volume: 29
Issue: 21
Begin Page: 1883
End Page: 1884
Appears in Collections:Articles


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  1. A1993NE96700051.pdf