Title: A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology
Authors: Meng, CC
Chiang, MH
Wu, TH
電信工程研究所
Institute of Communications Engineering
Keywords: CMOS;LNA;MOSFET amplifier
Issue Date: 20-Jan-2003
Abstract: A 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.10699
http://hdl.handle.net/11536/28158
ISSN: 0895-2477
DOI: 10.1002/mop.10699
Journal: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 36
Issue: 2
Begin Page: 136
End Page: 139
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