標題: A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics
作者: Yu, XF
Zhu, CX
Hu, H
Chin, A
Li, MF
Cho, BJ
Kwong, DL
Foo, PD
Yu, MB
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: frequency dependency;high capacitance density;metal-insulator-metal (MIM) capacitor;thin-film devices;voltage coefficient of capacitance (VCC)
公開日期: 1-Feb-2003
摘要: Metal-insulator-metal (MIM) capacitors with a different thickness of HfO2 have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness Of HfO2. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/mum(2) and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 x 10-(8)A/cm(2) at room temperature at I V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.
URI: http://dx.doi.org/10.1109/LED.2002.808159
http://hdl.handle.net/11536/28124
ISSN: 0741-3106
DOI: 10.1109/LED.2002.808159
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 2
起始頁: 63
結束頁: 65
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