標題: A novel bi-directional amplifier with applications in active Van Atta retrodirective arrays
作者: Chung, SJ
Chen, SM
Lee, YC
電信工程研究所
Institute of Communications Engineering
關鍵字: bi-directional amplifier;printed Yagi antenna;reflection-type amplifier;retrodirective array
公開日期: 1-Feb-2003
摘要: A novel two-port bi-directional amplifier, which may simultaneously amplify the waves coming from both ports, is proposed and demonstrated in this paper. Using this amplifier, a two-element active Van Atta retrodirective array is implemented and compared to a four-element passive array. The bi-directional amplifier is constructed by two identical one-port reflection-type amplifiers and a 3-dB 90degrees hybrid. The reflection-type amplifier is designed using an FET with a single-power-supply configuration. A quarter-wavelength microstrip radial stub is connected to the device's source terminal to narrow down the negative-resistance frequency range so as to avoid oscillation at undesired frequencies. The fabricated bi-directional amplifier provides the transmission gain over the frequency band from 5.76 to 6.88 GHz, with a peak value of 9.1 dB at 6.04 GHz. Printed Yagi antennas with four directors are adopted to build both the active and passive Van Atta arrays. The 3-dB back-scattering beamwidth of the active array is measured as wide as 74degrees. Finally, it is observed from the measurements that, although only half of the antenna elements are used, the active Van Atta array produces a back-scattering field level 4.5 dB,, on average, higher than the passive one does. This verifies the performance of the bi-directional amplifier.
URI: http://dx.doi.org/10.1109/TMTT.2002.807814
http://hdl.handle.net/11536/28112
ISSN: 0018-9480
DOI: 10.1109/TMTT.2002.807814
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 51
Issue: 2
起始頁: 542
結束頁: 547
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