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dc.contributor.authorSun, CLen_US
dc.contributor.authorWang, HWen_US
dc.contributor.authorChang, MCen_US
dc.contributor.authorLin, MSen_US
dc.contributor.authorChen, SYen_US
dc.date.accessioned2014-12-08T15:41:18Z-
dc.date.available2014-12-08T15:41:18Z-
dc.date.issued2003-02-17en_US
dc.identifier.issn0254-0584en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0254-0584(02)00377-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/28093-
dc.description.abstractBaPbO3 and Ba(Pb1-xBix)O-3 films made from barium 2-ethylhexanoate, lead 2-ethylhexanoate and bismuth acetate were prepared by metal-organic deposition (MOD) method on Pt/Ti/SiO2/Si substrate. The phase transition and the physical properties of these films were studied. The polycrystalline BaPbO3 phase starts to form above 600 degreesC and the Pb-excess addition would enhance the formation of single perovskite BaPbO3 phase. With increasing annealing temperature, the optimum sheet resistance 1.6 Omega sq(-1) (resistivity approximate to 1.07 x 10(-4) Omega cm) could be obtained at 750 degreesC. However, an annealing temperature over 800 degreesC causes reactions between substrate and BaPbO3 phase and results in sharp increase of resistance. On the other hand, the substitution of Pb by Bi in the Ba(Pb1-xBix)O-3 films could stabilize the perovskite phase, though the sheet resistance is raised over 10 Omega sq(-1) at x = 0.3. (C) 2002 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectbarium metaplumbateen_US
dc.subjectmetal-organic depositionen_US
dc.subjectthin filmsen_US
dc.subjectresistivityen_US
dc.titleCharacterization of BaPbO3 and Ba(Pb1-xBix)O-3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0254-0584(02)00377-2en_US
dc.identifier.journalMATERIALS CHEMISTRY AND PHYSICSen_US
dc.citation.volume78en_US
dc.citation.issue2en_US
dc.citation.spage507en_US
dc.citation.epage511en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000179569300034-
dc.citation.woscount3-
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