標題: DEVICE AND CIRCUIT SIMULATION OF ANOMALOUS DX TRAP EFFECTS IN DCFL AND SCFL HEMT INVERTERS
作者: WANG, TH
WU, SJ
HUANG, CM
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-1993
摘要: An integrated device and circuit analysis has been developed to evaluate the DX trap induced anomalous transient phenomena in DCFL and SCFL AlGaAs/GaAs HEMT inverters. The slow transient effect and the hysteretic characteristics of the input-output voltage transfer function in the inverters are simulated. The result shows that in comparison with the DCFL inverter, the DX trap effects are much improved in the SCFL inverter due to its particular operational principle.
URI: http://dx.doi.org/10.1109/43.248087
http://hdl.handle.net/11536/2809
ISSN: 0278-0070
DOI: 10.1109/43.248087
期刊: IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
Volume: 12
Issue: 11
起始頁: 1758
結束頁: 1761
顯示於類別:期刊論文


文件中的檔案:

  1. A1993ML08900015.pdf