標題: Growth temperature reduction for isoelectronic As-doped GaN
作者: Lee, WH
Huang, HY
Chen, WC
Lee, CF
Chen, WK
Chen, WH
Lee, MC
電子物理學系
Department of Electrophysics
關鍵字: GaN;isoelectronic As-doping;Raman scattering;spatial correlation length;photoluminescence;Hall mobility
公開日期: 1-Mar-2003
摘要: As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.
URI: http://dx.doi.org/10.1143/JJAP.42.L239
http://hdl.handle.net/11536/28077
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.L239
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 42
Issue: 3A
起始頁: L239
結束頁: L242
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