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dc.contributor.authorPeng, DZen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorLiu, CFen_US
dc.contributor.authorYeh, PHen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:41:14Z-
dc.date.available2014-12-08T15:41:14Z-
dc.date.issued2003-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/28047-
dc.description.abstractA novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550degreesC. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes.en_US
dc.language.isoen_USen_US
dc.subjectSiGeen_US
dc.subjectraised source drainen_US
dc.subjectultra thinen_US
dc.subjectUHVCVDen_US
dc.subjectpolysiliconen_US
dc.subjectthin-film transistoren_US
dc.titleA novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltageen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume42en_US
dc.citation.issue3en_US
dc.citation.spage1164en_US
dc.citation.epage1167en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000182276000010-
dc.citation.woscount2-
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