標題: A novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
作者: Peng, DZ
Chang, TC
Liu, CF
Yeh, PH
Liu, PT
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SiGe;raised source drain;ultra thin;UHVCVD;polysilicon;thin-film transistor
公開日期: 1-Mar-2003
摘要: A novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550degreesC. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes.
URI: http://hdl.handle.net/11536/28047
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 3
起始頁: 1164
結束頁: 1167
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