標題: Tunneling through InAs quantum dots in AlGaAs/GaAs double barrier resonant tunneling diodes with InGaAs quantum well emitters
作者: Lin, SD
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Mar-2003
摘要: Using InGaAs quantum well emitters, AlGaAs/GaAs double barrier resonant tunneling diodes with and without self-assembled InAs/GaAs quantum dots (QDs) have been studied extensively. Because the energy state of the emitter was lower than the level of the ground state within InAs QDs, the resonant tunneling was observed clearly near zero bias in all devices. From the results of bias-dependent photoluminescence and current-voltage characteristics, we obtain unambiguously the resonant tunneling through the InAs QDs, both controllably and reproducibly. (C) 2003 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.1543631
http://hdl.handle.net/11536/28036
ISSN: 0021-8979
DOI: 10.1063/1.1543631
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 93
Issue: 5
起始頁: 2952
結束頁: 2956
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