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dc.contributor.authorLiu, SJen_US
dc.contributor.authorChen, SFen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:41:13Z-
dc.date.available2014-12-08T15:41:13Z-
dc.date.issued2003-03-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.42.L287en_US
dc.identifier.urihttp://hdl.handle.net/11536/28033-
dc.description.abstractThe growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K, respectively. A magnetoresistance with a Deltarho/rho(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T-2- to T-3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.en_US
dc.language.isoen_USen_US
dc.subjectcolossal magnetoresistanceen_US
dc.subjectbuffer layeren_US
dc.subjecthole-doped manganiteen_US
dc.subjecttitanium dioxideen_US
dc.subjecttransport propertiesen_US
dc.subjectpulsed-laser depositionen_US
dc.subjectone-magnon scatteringen_US
dc.subjectinsulator-metal transitionen_US
dc.titleGrowth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-Buffered Si (100) substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.42.L287en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume42en_US
dc.citation.issue3Ben_US
dc.citation.spageL287en_US
dc.citation.epageL290en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000182278700009-
dc.citation.woscount2-
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