標題: Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-Buffered Si (100) substrates
作者: Liu, SJ
Chen, SF
Juang, JY
Lin, JY
Wu, KH
Uen, TM
Gou, YS
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
關鍵字: colossal magnetoresistance;buffer layer;hole-doped manganite;titanium dioxide;transport properties;pulsed-laser deposition;one-magnon scattering;insulator-metal transition
公開日期: 15-Mar-2003
摘要: The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K, respectively. A magnetoresistance with a Deltarho/rho(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T-2- to T-3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.
URI: http://dx.doi.org/10.1143/JJAP.42.L287
http://hdl.handle.net/11536/28033
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.L287
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 42
Issue: 3B
起始頁: L287
結束頁: L290
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