Full metadata record
DC FieldValueLanguage
dc.contributor.authorChang, TKen_US
dc.contributor.authorChu, FTen_US
dc.contributor.authorLin, CWen_US
dc.contributor.authorTseng, CHen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:41:11Z-
dc.date.available2014-12-08T15:41:11Z-
dc.date.issued2003-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSI.2003.811423en_US
dc.identifier.urihttp://hdl.handle.net/11536/28023-
dc.description.abstractIn this letter, a novel process for fabricating p-channel poly-Si1-xGex thin-film transistors (TFTs) with high-hole mobility was demonstrated. Germanium (Ge) atoms were incorporated into poly-Si by excimer laser irradiation of a-Si1-xGex/poly-Si double layer. For small size TFTs, especially when channel width/length (W/L) was less than 2 mum/2 mum, the hole mobility of poly-Si1-xGex TFTs was superior to that of poly-Si TFTs. It was inferred that the degree of mobility enhancement by Ge incorporation was beyond that of mobility degradation by defect trap generation when TFT size was shrunk to 2 mum/2 mum. The poly-Si0.91Ge0.09 TFT exhibited a high-hole mobility of 112 cm(2)/V-s, while the hole mobility of the poly-Si counterpart was 73 cm(2)/V-s.en_US
dc.language.isoen_USen_US
dc.subjectexcimer laser annealingen_US
dc.subjectGe dopingen_US
dc.subjectpoly-Si1-xGex thin-film transistor (TFT)en_US
dc.titleA novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSI.2003.811423en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume24en_US
dc.citation.issue4en_US
dc.citation.spage233en_US
dc.citation.epage235en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000183670900010-
dc.citation.woscount3-
Appears in Collections:Articles


Files in This Item:

  1. 000183670900010.pdf