標題: A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization
作者: Chang, TK
Chu, FT
Lin, CW
Tseng, CH
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: excimer laser annealing;Ge doping;poly-Si1-xGex thin-film transistor (TFT)
公開日期: 1-Apr-2003
摘要: In this letter, a novel process for fabricating p-channel poly-Si1-xGex thin-film transistors (TFTs) with high-hole mobility was demonstrated. Germanium (Ge) atoms were incorporated into poly-Si by excimer laser irradiation of a-Si1-xGex/poly-Si double layer. For small size TFTs, especially when channel width/length (W/L) was less than 2 mum/2 mum, the hole mobility of poly-Si1-xGex TFTs was superior to that of poly-Si TFTs. It was inferred that the degree of mobility enhancement by Ge incorporation was beyond that of mobility degradation by defect trap generation when TFT size was shrunk to 2 mum/2 mum. The poly-Si0.91Ge0.09 TFT exhibited a high-hole mobility of 112 cm(2)/V-s, while the hole mobility of the poly-Si counterpart was 73 cm(2)/V-s.
URI: http://dx.doi.org/10.1109/TCSI.2003.811423
http://hdl.handle.net/11536/28023
ISSN: 0741-3106
DOI: 10.1109/TCSI.2003.811423
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 4
起始頁: 233
結束頁: 235
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